| PART |
Description |
Maker |
| SMCTTA32N14A10 |
Advanced Pulse Power Device N-MOS VCS
|
Solidtron
|
| ISL8130 ISL8130IAZ ISL8130IRZ |
Advanced Single Universal Pulse-Width Modulation (PWM) Controller
|
Intersil Corporation
|
| MCRF250 MCRF250-I_WFQ23 MCRF250-I_P MCRF250-I_S MC |
The MCRF250 is one time contactlessly programmable passive Radio Frequency Identification (RFID) IC device with advanced anti-collision features. The device is powered by an external RF transmitter (reader) through inductive coupling. The
125 kHz microID Passive RFID Device with Anti-Collision
From old datasheet system
|
MICROCHIP[Microchip Technology]
|
| 20KW256A 20KW160 20KW160A 20KW216 20KW216A 20KW240 |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
160.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
192.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
112.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
300.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
204.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
232.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
280.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
172.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
|
MDE Semiconductor
|
| SLC800-H SLC800 |
A highly advanced linear optocoupler device
|
SOLID STATE OPTRONICS
|
| AP01L60AT10 |
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness effectiveness
|
Advanced Power Electronics Corp.
|
| 15KW160 15KW160A 15KW260 15KW260A 15KW240 15KW240A |
160.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
260.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
240.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
220.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
110.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
200.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
280.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
170.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
180.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
|
MDE Semiconductor
|
| PHI214-0851 PH1214-0.85L |
Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20% Duty 1.2 - 1.4 GHz
1200-1400 MHz,0.85 W, 2 ms pulse,radar pulsed power transistor
|
Tyco Electronics
MA-Com
|
| PHI214-30EL PH1214-30EL |
Radar Pulsed Power Transistor, 30W, 1.0ms Pulse, 10% Duty 1.2 - 1.4 GHz
High Speed Comparator; Package: PDIP; No of Pins: 16; Temperature Range: 0°C to 70°C
Radar Pulsed Power Transistor, 3OW, 1 .Oms Pulse, 10% Duty . 1.2 - 1.4 GHz
Radar Pulsed Power Transistor/ 3OW/ 1 .Oms Pulse/ 10% Duty . 1.2 - 1.4 GHz
|
Tyco Electronics
|
| PCA2003U/10AA |
32 kHz watch circuit with programmable adaptive motor pulse and pulse period
|
NXP Semiconductors
|
| PCA2003 PCA2003U_10AA |
32 kHz watch circuit with programmable adaptive motor pulse and pulse period
|
NXP Semiconductors
|
